Dr. Ashok Kumar Saxena
Electronics and Communication Engineering Department
Indian Institute of Technology(I.I.T) Roorkee,
Roorke, India
1.Name Dr.Ashok Kumar Saxena
2.Date and 1st July 1950
Place of Birth Rampur (U.P)
3.(i)Present Address: Professor HAG & Group Leader
Microelectronics & VLSI Technology
Electronics and Communication Engineering Department
Indian Institute of Technology(I.I.T) Roorkee,
Roorke, Uttrakhand 247-667
(ii) Permanent Address: s/o Shri Ram Gopal Saxena
17 Chah Shore Street (Khari Kuan)
244-901 Rampur (U.P)
4.Contact Details: E-mail: kumarfec@iitr.ernet.in, aksaxena1950@gmail.com
Telephone:01332-285653(O)/285004(R)
Mobile:09412024440
5.Specialization : Electronics(Semiconductor Physics/Electronics/Technology/VLSI)
with special reference to III-V for high speed/ frequency applications
6.Membership of Academic Bodies
(i) Fellow Inst of Phys.(London) since 2003
(ii) Fellow Inst of Engg & Tech.(Formerly Inst of Elect Engs.) (U.K) since 2009
(iii) Life Fellow Inst of Electron. & Telecom Engs since 1983
(iv) Life Fellow Inst of Engs. and Chartered Eng. Since 2006
(v) Life Fellow Ind Microelectron Soc. since 2007
(vi) Senior Member IEEE (U.S.A) since 2004
(vii) Member BITSAA, Pilani
(viii) Member Sheffield & Manchester Univs. Alumini Associations
7.Educational Qualifications and Positions Held
Degree
Year/Position/Div.
University/Institute
Remarks
Ph.D
1978
UniversityofSheffield(U.K)
(project at Std. Telecom.Lab,Harlow)
Govt of India National Scholar
(British Council Fee Award)
M.Engg
1975/-/Distn.
University of Sheffield (U.K)
(course work at Univ.Manchester
Inst. Sc. &i Tech.)
Govt ofIndiaNational Scholar
(British Council Fee Award)
M.Sc.Tech
1971/-/1st(8.27/10)
B.I.T.S,Pilani
U.G.C, J.R.F
M.Sc
1969/3rd/1st(70.75%)
AgraUniversity
U.P.Govt Scholarship
Positions Held Pay Scale/Present Basic University/Institute
Professor(22/10/1989-to date)
(2nd senior most in IIT,Roorkee)
67,000-79,000/79,000
37,000-67,000/18,400-22,400/5100-7300/1500-2500
I.I.T.Roorkee/Univ of Roorkee
Reader( Reader(23/12/1978-22/12/1988)
3700-5700/1200-1900
Univ of Roorkee
S.S.A(16/5/1972-17/10/1974)
550-900/325-575
C.S.I.R (C.E.E.R.I,Pilani)
Reader( Senior Visiting Fellow (SERC,UKUK)(19 (86-87)
-
Univ ofSurrey, U.K
INSA-Royal Society Visiting Fellow(Nov.1982-Feb.1983)
-
Univ ofSurrey, U.K
As a Ph.D research scholar
(1975-78)
-
Standard Telecom Lab,Harlow (U.K)
Experience:
(i) As Professor-25 Years
(ii) As Reader - 10 Years
(iii) As S.S.A - 2.5 Years
Total -37.5 Years
8.Academic and Research Achievements
Pub etc. : Citation Index of 845
(i) Journals- 125
(ii) Conferences- 122
(iii) Reports- 36
(iv) Ph.D- 05
In Prog. 01
(v) M.E/M.Tech/M.Phil-45
In Prog. 05
Projects :DST, CSIR, INSA, UGC, Univ. of Roorkee, Royal Society (London) & SERC (U.K). In 2012, DST has approved us a 42 Lac project entitled ”Investigation of Silicon nanowire FET reliability at high and low temperatures and its modeling”
During 1971-74 with CEERI, Pilani, I mainly worked on Si device fabrication technology related to Avalanche and Varactor diodes and their circuit applications. This work fetched me S.K.Mitra Memorial Award [A.K.Saxena,W.S.Khokle and Amarjit Singh “On the design and development of 4-Ghz Varactor diode parametric amplifier” J.I.E.T.E, vol 21 (11), 605-612,1975]
From 1974 onwards, my activities have been centered around growth, fabrication and characterization of 3-5 mixed compounds (with special reference to GaAs/AlAs mixed alloys) and devices (Schottky Barrier). During my Ph.D tenure at Sheffield under Late Prof.P.N.Robson (OBE,FRS,FInstP & FIEEE) and Prof. A.Majerfeld (now Prof Emeritus with university of Colarado, Boulder), I also spent nearly a year with Dr G.D.Pitt at Standard Telecommunication Laboratory, Harlow using their high pressure facilities for characterization. My work under the supervision of Late Prof P.N.Robson and Prof A.Majerfeld established for the first time with certainity the complete band structure of GaAlAs alloys. The deep energy level discovered was later christned as “Saxena’s Deep Donor” by Philips Research Laboratory, Netherlands.[Henning J.C.M, Ansems J.P.M and Nijs de A.G.M “Photolumienscence excitation of Saxena’s deep donor in AlGaAs” J.Phys.C (Solid State Physics) 17, 34, L915-921, 1984 ].It has helped in understanding the complicated behavior in Gunn Effect and degradation effects in other low/high field optoelectronic devices such as Lasers and LED’s. The measurements under pressure revealed clearly the evidence of intervalley scattering for the first time and the data analysis resulted in knowing the values of various scattering parameters needed for device design. It also won me another national award i.e University of Roorkee Khosla Award and Gold Medal.[ A.K.Saxena and K.S.Gurumurthy “Scattering parameters from an analysis of the Hall electron mobility in GaAlAs alloys” J. Phys. Chem. Solids (Pergamon Press, USA), 43, 9, pp 801-808,1982 ]. In addition, Khosla Commendation Awards were given to me two times. The work on defect levels also won another S.K.Mitra Memorial Award [A.K.Saxena “Physico-chemical origin of majority and minority carrier traps in n-type VPE and LPE GaAs” J.I.E.T.E, vol 26 (6), 293-297,1980]
Some of the work has also found place in the following books:
1.Karl W Boer “Survey of Semiconductor Physics: Electrons and Holes in Semiconductors(1st
Edn.)/Electrons and Other Particles in Semiconductors”(Van Nostrand Reinhold,USA),
2.Heinz Kalt “Semiconductors: The Influence of Multivalley Band Structure”(Springer-
Verlag, Germany)
3.Sadao Adachi “Properties of Semiconductor Alloys: Group-IV,II-V and II-VI
Semiconductors”(Wiley,USA)]
4. Gordon T Dyos and T.Farrell “Electrical resistivity handbook” IET(UK) 2010
Lately, in addition to my work on III-V semiconductors, I have also contributed largely in the area of VLSI design and brought its awareness among a very large group (about 350 over last few years) of students from other colleges in India by organizing special winter and summer programmes through the Science and Technology Entrepreunership Park (STEP) established in I.I.T.,Roorkee campus by the Department of Science and Technology (DST), Govt. of India. Presently, I am leading the group as its Leader and involved in teaching and research to B.Tech, M.Tech and Ph.D students for the last 33 years or so in Solid State Materials/Physics/Devices and VLSI Design/Technology. Three of my research students have recently been awarded Ph.D and one is pursuing in VLSI design. In addition, I have also written nine volumes for working professionals in other institutions under sponsorship from All India Council of Technical Education (AICTE), Govt. of India,New Delhiand Quality Improvement Programme (QIP) of I.I.T., Roorkee. Due to his miscellaneous services, in 2009 he was conferred “Bharat Excellence Award and Gold Medal” by Friendship Forum of India, aDelhibase social organization.
Impact of contributions
GaAs/AlAs alloys are used in electro-optical devices such as LED’s, LASERS, modulators, light detectors, Gunn and DOVETT diodes etc. It is, therefore, essential to understand the band structure, transport properties and defect behavior so that the industries can provide suitable materials for device fabrication. For the first time, I have established the three band structure, deep level characteristics and transport properties across the whole composition alloys subjected to low temperatures and high pressures. For low composition optical devices, the electrons in the higher energy valleys do not contribute to emission, hence efficiency is lowered. An important result of his studies is the discovery that for 0.20<x<0.80, the conduction electrons are mainly controlled by ‘Saxena’s deep donor’ coupled to the L minima.( Henning J.C.M, Ansems J.P.M and Nijs de A.G.M “Photolumienscence excitation of Saxena’s deep donor in AlGaAs”J.Phys.C,1,34,L915-921,1984). The deep donor seems to be correlated to Si content. The results of his contributions have been used by other researchers to improve material and device/circuit design as evident from the high citation index.
9.Other Contributions
Books: Research work included and referred in manyUS, British, Japanese & German books, Written 9 packages for working professionals sponsored by AICTE
10.Awards and Honours
Awards : INSA Young Scientist Gold Medal, Khosla Award Gold Medal & Commendation Certificates, Bharat Excellence Award & Gold Medal of FFI 06 & 09, Chosen for rising personalities of India & gold medal and Bharat Jyoti Award, S.K.Mitra Memorial Awards (twice), Govt. of India National Scholarship for Studies Abroad, Govt. of U.P National Scholarship, UGC Junior Fellowship, British Council Fees Award, SERC (U.K) Awarded Senior Visiting Fellowship, Univ. of Michigan, Utah & Calgary Fellowship Awards, Overseas travel/ grants from AICTE, DST, DOE, INSA, SERC(UK), NTT(Japan), IMT(Romania), Royal Society(UK), Ministry of Edn.& Social Welfare and UOR, Awards in Drawing & Paintings
Hons : Govt. of India National Scholar in U.K, President/Chief Advisor ECC-Univ./IIT Roorkee, Reviewer for IEEE Journals on Electron Devices and Nanotechnology, Phys. Status. Solidi (Germany), Int. J. Electron.(U.K), J.I.E.T.E , J.I.E, Def. Sci. J and Commun. In Inst etc., , A level in GaAlAs christned as “Saxena’s Deep Donor” by Philips Research Laboratory - Netherlands, Reviewer / Member Advisory Boards / Session Chairman /Invited Speaker for Nat./Int. Conf., Indian and Overseas Journals, University of Roorkee, Paper setter/ Examiner for UPSC, Member Roorkee Univ. Committee for Res.& Ind. Liason, Member Administrative Committee, Member CPF sub-committee, Professorial’s and Faculty Boards, Chairman M.Tech admission committees, Coordinator Inst. Electronics coursel, Chairman Technical Sessions & invited speaker at various conferences. Member RDC and BOS of many universities/institutions, As coordinator trained about 350 U.G Engg students of various Engg colleges for VLSI/VHDL entrepreunership.
11.Editor/Editorial Boards
(i)Member Overseas Advisory Board of IEICE Trans on Electronics(Japan)
(ii) Hony. Editor & Memb. Editorial Board of IETE
(iii)Member Editorial Board of Int. J. Biosci. & Tech., Salem, T.N, India
(iv)Int. J. of Emerging Technologies and Applications in Engg. Technologies and Sciences
(IJETAETS) and Int. J. of Computer Applications in Engg. Technologies and Sciences
(IJCAETS)
12.Committees
(i) Chairman NBA/AICTE,Delhi Accreditation committees
(ii) Chairman of DOEACC,Delhi Accreditation committees
(iii)Chairman IPR Evaluation Committee,IITR
(iv)President/Chief Advisor Educational Cinema Club,IITR
(v)Member All India REE B.E/B.Arch Entrance Exam committee,UOR/IITR
(vi) MHRD nominee on TEQIP-I & II/Evaluator ,mentor and auditor for 3 NIT’s
(vii) Member NBA Engg. Accreditation & Evaluation (EAEC)/Appallaete committees of NBA
(viii)Member Board of Governors, Shobhasaria Group of Insts.,Sikar(Rajasthan)
(ix)Nominator for INSA (Delhi) Young Scientist Award & Foreign Colloboration Programmes
(x)Member Faculty Appraisal Committee (other than Professors),IITR
(xi)Chairman Dept Library Committee,IITR
(xii)Chairman Ph.D interview committee,E & CE Dept,IITR
(xiii)Chairman a.c committee,IITR
(xiv)Chairman FPS and DF-PS committees,IITR
(xv)Chairman Grade Moderation Committee,IITR
(xvi) Group Leader Microelectronics and VLSI Technology,IITR
(xvii)Member Senate, Syndicate, Academic council,IITR/UOR
(xviii)Centre Supdt DOEACC(Delhi) exams
(xix)Member institute student affairs council,IITR
(xx)Evaluator for Khosla National Award,IITR
(xxi) Convener Fact Finding Committee,IITR
(xxii) Member purchase committee, Tel Exch.,IITR
13.Any other useful information
I Completed my education upto B.Sc from Rampur. My elder daughter Shweta holds M.S from NTU and Ph.D from NUS, Singapore both in Electronics Engg with specialization in CNT solar cells. Presently, she is Scientist with National Energy Inst, NTU. The younger daughter Sugandha (B.Tech in Electronics Engg. from RTU,Kota) has completed 4 semester M.Tech (VLSI Design) course from Amity Univ.,Noida with summer project at I.I.T.,Roorkee and 4th semester project at CEERI,Pilani. Mrs Saxena is a graduate and a housewife.